document number 2659 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v cbo collector ? base voltage v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i c = 0) i c collector current i c(pk) peak collector current i b base current p tot total dissipation at t case = 25c t stg operating and storage temperature range 80v 80v 7v 4a 10a 2a 50w ?65 to 200c lab seme 2n3741 smd mechanical data dimensions in mm
medium power pnp silicon power transistor ? low saturation voltage high gain smd1 absolute maximum ratings (t case = 25c unless otherwise stated) features hermetically sealed surface mount package. small footprint - efficient use of pcb space. lightweight high packing densities pad 1 ? base pad 2 ? collector pad 3 ? emitter complementary to npn 2n3766smd
parameter test conditions min. typ. max. unit 80 100 1.0 100 1 0.5 40 30 100 20 10 0.6 1.0 3 4 100 25 v a ma a ma ma ? v mhz pf ? document number 2659 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. 2N3741SMD i c = 100ma i b = 0 v cb = 80v i e = 0 v ce = 60v i b = 0 v ce = 80v v be(off) = 1.5v v ce = 60v v be(off) = 1.5v t c = 150c v eb = 7v i c = 100ma v ce = 1v i c = 250ma v ce = 1v i c = 500ma v ce = 1v i c = 1a v ce = 1v i c = 1a i b = 125ma i c = 250ma i b = 1v i c = 100ma v ce = 10v f = 1mhz v cb = 10v i c = 0 f = 100khz i c = 50ma v ce = 10v f = 1khz electrical characteristics (t case = 25c unless otherwise stated) collector ? emitter sustaining voltage collector base cut?off current collector emiiter cut?off current collector cut?off current emitter base cut?off current dc current gain collector ? emitter saturation voltage base ? emitter saturation voltage transition frequency output capacitance small signal current gain * pulse width 300 s , duty cycle < 2% v ceo(sus)* i cbo i ceo i cex i ebo h fe* v ce(sat)* v be* f t c ob h fe lab seme dynamic characteristics electrical characteristics
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